| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing an electrode occupation area on a semiconductor chip as well as capable of improving the reliability of a signal electrode with coaxial structure formed on the semiconductor chip, concerning the semiconductor device which carries out flip chip connection for connecting especially a high frequency semiconductor chip to this high frequency semiconductor chip, with respect to the semiconductor chip and the semiconductor device using it. <P>SOLUTION: A semiconductor chip 1 comprises a signal electrode 2 with a coaxial structure consisting of an inner conductor 3 and an outside conductor 4 surrounding its circumference, and is mounted in a wiring board by a flip chip method via the signal electrode 2. The height of the inner conductor 3 on the semiconductor chip 1 is set higher than that of the outside conductor 4. <P>COPYRIGHT: (C)2007,JPO&INPIT |
