TFT USING SINGLE CRYSTAL SILICON NANO-WIRE AND METHOD FOR FABRICATING OF THE SAME

摘要

A TFT(thin film transistor) using a single crystalline silicon nano wire is provided to improve the driving characteristic of the TFT and embody LSI(large scale integration) of a system by fabricating a TFT made of a single crystalline silicon nano wire. A TFT is formed on an insulating substrate. A source/drain of the TFT are formed in a single crystalline silicon nano wire(210). A channel is formed in at least one single crystalline silicon nano wire. The substrate can be made of glass, flexible polymer, plastic, crystal, quartz or silicon.