发明名称 |
Metallization method of semiconductor device |
摘要 |
A method for forming a metallization contact in a semiconductor device includes the steps of: (a) forming an insulating layer on a semiconductor substrate including an active device region; (b) forming a contact hole to expose a portion of the active device region by etching a portion of the insulating layer; (c) forming a CVD TiN layer on the insulating layer and inside the contact hole; (d) forming a PVD TiN layer on the CVD TiN layer using ionized metal plasma sputtering; and (e) forming a metal layer on the PVD TiN layer.
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申请公布号 |
US7344974(B2) |
申请公布日期 |
2008.03.18 |
申请号 |
US20050320304 |
申请日期 |
2005.12.29 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG JOO |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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