Method of manufacturing silicon single crystal, silicon single crystal ingot and wafer fabricated by the same,申请号KR20060136531-传众专利搜索

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发明名称	Method of manufacturing silicon single crystal, silicon single crystal ingot and wafer fabricated by the same
摘要
申请公布号	KR100846632(B1)	申请公布日期	2008.07.16
申请号	KR20060136531	申请日期	2006.12.28
申请人		发明人
分类号	H01L21/20	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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