METHOD FOR MANUFACTURING SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a substrate, by which the crystallinity of a crystal layer of a group III nitride semiconductor can be improved.

SOLUTION: The method for manufacturing the substrate includes a chromium layer depositing process for depositing a chromium layer 20 on a ground substrate 10 and a nitriding process for nitriding the chromium layer 20 at a temperature of ≥1,000°C to convert it into a chromium nitride film 30. In the nitriding process, an intermediate layer is formed between the ground substrate 10 and the chromium nitride film 30. Further, the method includes a crystal layer growth process for growing a crystal layer of a group III nitride semiconductor on the chromium nitride film 30.

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