发明名称 |
Vertical Spin Transistor and Method of Manufacturing the Same |
摘要 |
A vertical spin transistor according to an embodiment of the present invention includes: a first source/drain layer including a layer formed of magnetic material; a protruding structure including, a channel layer formed on the first source/drain layer and including a layer formed of semiconductor, and a second source/drain layer formed on the channel layer and including a layer formed of magnetic material; a gate insulating film formed on a side of the channel layer; and a gate electrode formed on a surface of the gate insulating film.
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申请公布号 |
US2008217711(A1) |
申请公布日期 |
2008.09.11 |
申请号 |
US20070855322 |
申请日期 |
2007.09.14 |
申请人 |
SUGIYAMA NAOHARU;SAITO YOSHIAKI |
发明人 |
SUGIYAMA NAOHARU;SAITO YOSHIAKI |
分类号 |
H01L29/82;H01L21/336 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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