| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an epitaxial wafer for a light emitting element capable of reducing the cost of the light emitting element as compared with a conventional one by achieving growth of an epitaxial layer excelling in in-plane uniformity of film thickness and composition to allow a substrate increased in diameter relative to a conventional one to be used. <P>SOLUTION: This epitaxial wafer for an AlGaInP-based light emitting element wherein epitaxial layers of at least an n-type conductive ALGaInP clad layer, an AlGaInP active layer, a P-type conductive AlGaInP clad layer and a p-type conductive contact layer are sequentially formed on an n-type conductive GaAs substrate having an outer diameter of 100-200 mm, and each of the epitaxial layers has an effective in-plane film thickness distribution is manufactured by setting a flow rate of growth gas, radiuses of a plurality of inscribed circles of the substrate arranged on a susceptor concentrically with the susceptor, and the distance between a substrate heating heater surface and the susceptor are 20-70 NL/min, 250-60 mm and 21-50 mm, respectively, and controlling the height of a growth gas passage to 33-3 mm in an organic metal vapor-phase epitaxial method. <P>COPYRIGHT: (C)2009,JPO&INPIT |
