| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a working method of wafer with which an optical device wafer can be worked without causing warpage on it. <P>SOLUTION: Disclosed is the working method of the wafer 2 where an optical semiconductor layer 21 is laminated on the surface of a sapphire substrate 20 and a plurality of optical devices are formed, with which the plurality of optical devices are divided along streets 23 sectioning them. The working method includes: an optical semiconductor layer separation stage of separating the optical semiconductor layer 21 along the streets 23 by irradiating the optical semiconductor layer 21 with a laser light beam with a wavelength having absorptivity along the streets 23 formed on the surface of the wafer 2; a protective member mounting stage of sticking a protective member on the surface of the wafer 2 after the optical semiconductor layer separation stage is completed; and a reverse surface grinding stage of grinding the reverse surface of the wafer 2 on which the protection member is stuck to a finish thickness of the optical devices. <P>COPYRIGHT: (C)2009,JPO&INPIT |
