METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A formation method of the semiconductor device is provided to remove the void generated in the ball type recess region having the bulb recessed gate structure by charging the conductive material into the recess region or the groove formed in the first gate electrode of the recess region. A gate reserved area of the active area(2) is etched and the recess region is formed. The ball type recess region is formed by etching the lower part of the recess region. A first gate electrode(10) is formed in the ball type recess region and the recess region. The first gate electrode of the ball type recess region and the recess region are etched and the void is exposed. The ball type recess region and the recess region are reclaimed and a second gate electrode(14) is formed. A gate oxidation film(8) is formed on the inner surface of the ball type recess region and the recess region.