| 摘要 |
The method of manufacturing the semiconductor device is provided to prevent the bowing phenomenon when etching PSG and TEOS oxidation film by performs the etching of the TEOS oxidation film and PSG oxide film to form the store electrode. The first sacrificial oxide(220) is formed on the top of the semiconductor substrate(200) having the storage node contact(205). The first sacrificial oxide is etched. The storage node contact is exposed. The nitride film burying the first store electrode region is formed. The second sacrificial oxide(240) is formed on the whole surface including first store electrode region. The second sacrificial oxide is etched. The second store electrode region(243) exposing the first store electrode region is formed. The nitride film is removed. The store electrode region consisting of the first store electrode region and the second store electrode region is formed. The first sacrificial oxide is the PSG(Phosphorus Silica Glass) oxide film. The second sacrificial oxide is the TEOS(Tetra Ethyl Ortho Silicate) oxide film.
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