REDUCTION OF FEATURE CRITICAL DIMENSIONS

摘要

REDUCTION OF FEATURE CRITICAL DIMENSIONS A feature in a layer (308) is provided. A photoresist layer is formed over the layer (308). The photoresist layer is patterned to form photoresist features (312) with photoresist sidewalls, where the photoresist features (312) have a first critical dimension (316). A conformal layer (320) is deposited over the sidewalls of the photoresist features (312) to reduce the critical dimensions of the photoresist features (312). Features are etched into the layer (308), wherein the layer (308) features have a second critical dimension (324), which is less than the first critical dimension (316). Fig. 3C