| 摘要 |
A semiconductor device comprises a substrate defining a recessed active region and a fin active region connected to the recessed active region and extending above the recessed active region. The fin active region includes first, second, third, fourth, and fifth sides. The first and second sides are proximate the recessed active region. The fifth side is an upper side of the fin active region. The third side is provided between the first side and the fifth side. The fourth side is provided between the second side and the fifth side. A gate insulation layer is formed over the first, second, third, fourth, and fifth sides of the fin active region. A gate electrode layer is formed over the gate insulation layer to substantially surround the first, second, third, fourth, and fifth sides of the fin active region. The first, third, and fifth sides have substantially different slopes. The third and fourth sides are curved surfaces.
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