发明名称 |
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal having a higher crystal growth rate. SOLUTION: The method for producing a group III nitride crystal includes a process for removing moisture by heat-treating a reaction vessel 21 beforehand, a melt formation process for forming a melt 1 containing at least a group III element and a catalyst around a seed crystal 2 in the reaction vessel 21 from which moisture is removed, and a crystal growth process for growing a group III nitride crystal 4 on the seed crystal 2 by supplying a nitrogen-containing substance 3 to the melt 1. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010018518(A) |
申请公布日期 |
2010.01.28 |
申请号 |
JP20090239483 |
申请日期 |
2009.10.16 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
HIROTA TATSU;NAKAHATA SEIJI |
分类号 |
C30B29/38;B01J23/04;B01J23/745;C30B19/04;C30B30/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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