发明名称 METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method for producing a group III nitride crystal having a higher crystal growth rate. SOLUTION: The method for producing a group III nitride crystal includes a process for removing moisture by heat-treating a reaction vessel 21 beforehand, a melt formation process for forming a melt 1 containing at least a group III element and a catalyst around a seed crystal 2 in the reaction vessel 21 from which moisture is removed, and a crystal growth process for growing a group III nitride crystal 4 on the seed crystal 2 by supplying a nitrogen-containing substance 3 to the melt 1. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010018518(A) 申请公布日期 2010.01.28
申请号 JP20090239483 申请日期 2009.10.16
申请人 SUMITOMO ELECTRIC IND LTD 发明人 HIROTA TATSU;NAKAHATA SEIJI
分类号 C30B29/38;B01J23/04;B01J23/745;C30B19/04;C30B30/00 主分类号 C30B29/38
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