发明名称 |
Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element |
摘要 |
To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide. |
申请公布号 |
US9362190(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201414581826 |
申请日期 |
2014.12.23 |
申请人 |
NICHIA CORPORATION |
发明人 |
Shioji Shuji;Kuramoto Masafumi |
分类号 |
H01L33/60;H01L23/15;H01L29/41;H01L33/46 |
主分类号 |
H01L33/60 |
代理机构 |
Foley & Lardner LLP |
代理人 |
Foley & Lardner LLP |
主权项 |
1. A semiconductor element comprising:
a substrate made of an oxide; a semiconductor element structure grown on an upper surface of the substrate; and a metal film provided on a lower surface of the substrate, wherein the metal film contains nanoparticles made of an oxide. |
地址 |
Anan-Shi JP |