发明名称 Semiconductor element, semiconductor device including the same, and method for manufacturing semiconductor element
摘要 To provide a semiconductor element that can have the high adhesion between a substrate made of an oxide or the like and a metal film, a semiconductor element includes a substrate made of an oxide, a semiconductor element structure provided on an upper surface of the substrate, and a metal film provided on a lower surface of the substrate, in which the metal film contains nanoparticles made of an oxide.
申请公布号 US9362190(B2) 申请公布日期 2016.06.07
申请号 US201414581826 申请日期 2014.12.23
申请人 NICHIA CORPORATION 发明人 Shioji Shuji;Kuramoto Masafumi
分类号 H01L33/60;H01L23/15;H01L29/41;H01L33/46 主分类号 H01L33/60
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP
主权项 1. A semiconductor element comprising: a substrate made of an oxide; a semiconductor element structure grown on an upper surface of the substrate; and a metal film provided on a lower surface of the substrate, wherein the metal film contains nanoparticles made of an oxide.
地址 Anan-Shi JP