发明名称 |
Method of supplying cobalt to recess |
摘要 |
A method of supplying cobalt to a recess formed in an insulation film of an object to be processed is disclosed. In one embodiment, the method includes forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess, forming a cobalt film on the cobalt nitride film, and heating the cobalt film. |
申请公布号 |
US9362167(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201514620886 |
申请日期 |
2015.02.12 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Shimada Atsushi;Furukawa Shinji;Hatano Tatsuo |
分类号 |
H01L21/20;H01L21/768;H01L21/285 |
主分类号 |
H01L21/20 |
代理机构 |
Nath, Goldberg & Meyer |
代理人 |
Nath, Goldberg & Meyer ;Meyer Jerald L. |
主权项 |
1. A method of supplying cobalt to a recess formed in an insulation film of an object to be processed, comprising:
forming a cobalt nitride film on a surface of the insulation film comprising a surface defining the recess; forming a cobalt film on the cobalt nitride film; and flowing cobalt making up the cobalt film toward a bottom of the recess by heating the object to be processed so as to fill the recess with cobalt from the bottom of the recess. |
地址 |
Tokyo JP |