Method for forming a mask by etching conformal film on patterned ashable hardmask

摘要

Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.

主权项

1. A method of processing a semiconductor substrate, the method comprising:
transferring a pattern from an overlying photoresist to a core amorphous carbon layer; depositing a conformal film over the patterned core amorphous carbon layer on the semiconductor substrate; depositing a gap-fill amorphous carbon layer over the conformal film; planarizing the semiconductor substrate with a process that etches both the conformal film and the gap-fill amorphous carbon layer to remove the conformal film over the core amorphous carbon layer while leaving the conformal film deposited between the core amorphous carbon layer and the gap-fill amorphous carbon layer; and selectively etching the conformal film to form a mask.