Substrate processing method, substrate processing apparatus, and storage medium

摘要

A wafer is held horizontally and rotated by a substrate holding mechanism. An aqueous alkaline solution is supplied to a wafer by a nozzle and caused to flow from a central portion to a peripheral edge portion of the wafer, thereby etching the wafer. An amount of oxygen, which is equal to or more than the amount of oxygen in atmospheric air involved in the aqueous alkaline solution flowing on the wafer, is previously dissolved in the aqueous alkaline solution.

主权项

1. A substrate processing method for processing a substrate to be processed, the method comprising:
a step of holding the substrate horizontally and rotating the substrate; and a step of supplying an aqueous alkaline etching solution in which oxygen is dissolved previously to the substrate by a nozzle, thereby etching the substrate; wherein the nozzle is movable between each of a first position above the central portion of the substrate, a second position outside of the first position, and a third position outside of the second position, and the etching step includes
a first moving supply step of supplying the aqueous alkaline etching solution to the substrate while moving the nozzle from the second position to the first position, anda second supply step of supplying the alkaline aqueous etching solution to the substrate after the first moving supply step while moving the nozzle from the third position to the second position, wherein a concentration of oxygen in the aqueous alkaline etching solution is 2500 ppb to 4800 ppb.