Electronic devices having semiconductor memory units and method of fabricating the same

摘要

Electronic devices have a semiconductor memory unit including a magnetization compensation layer in a contact plug. One implementation of the semiconductor memory unit includes a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, and a contact plug arranged in at least one side of the variable resistance element and comprising a magnetization compensation layer. Another implementation includes a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of and separated from the variable resistance element to include a magnetization compensation layer that produces a magnetic field to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer.

主权项

1. An electronic device comprising a semiconductor memory unit that includes:
a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of the variable resistance element and separated from the variable resistance element, the contact plug comprising a magnetization compensation layer that produces a magnetic field at the variable resistance element to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer.