| 主权项 |
1. A film deposition apparatus for depositing a film on a substrate by carrying out a cycle of alternately supplying at least two kinds of reaction gases that react with each other to the substrate to produce a layer of a reaction product in a chamber, the film deposition apparatus comprising:
a rotation table provided in the chamber, the rotation table having a substrate receiving area for mounting the substrate thereon; a first reaction gas supplying part configured to supply a first reaction gas to one surface of the rotation table on which the substrate receiving area is provided; a second reaction gas supplying part configured to supply a second reaction gas to the one surface, the second reaction gas supplying part being separated from the first reaction gas supplying part along a circumferential direction of the rotation table; a separation area located along the circumferential direction between a first process area to which the first reaction gas is supplied and a second process area to which the second reaction gas is supplied, the separation area including a separation gas supplying part from which a separation gas is supplied; a first evacuation channel having an evacuation port between the first process area and the separation area; a second evacuation channel having an evacuation port between the second process area and the separation area; a first evacuation part connected to the first evacuation channel via a first valve; a second evacuation part connected to the second evacuation channel via a second valve; a first pressure detecting part interposed between the first valve and the first evacuation part; a second pressure detecting part interposed between the second valve and the second evacuation part; a process pressure detecting part provided in at least one of the first and second valves; and a control part configured to output a control signal for regulating a flow ratio between gases flowing into the first and second evacuation channels and controlling opening of the first and second valves based on a pressure detection value detected from each of the first and second pressure detecting parts, and a pressure detection value detected from the process pressure detecting part, and compare the pressure detection value detected from each of the first and second pressure detecting parts and the pressure detection value detected from the process pressure detecting part, so that each of the pressure inside the chamber and the flow ratio between the gases flowing in the first and second evacuation channels becomes a predetermined value, respectively; wherein the separation gas supplying part is provided inside a groove portion that extends in a radial direction of the chamber, wherein the chamber includes a ceiling plate having a first ceiling surface and a second ceiling surface positioned higher than the first ceiling surface, the ceiling plate including a convex portion projecting from the second ceiling surface of the ceiling plate, wherein the first ceiling surface is positioned closer to the rotation table than the second ceiling surface in a height direction of the film deposition apparatus, wherein the separation gas supplied from the separation gas supplying part flows in a space between the first ceiling surface and the rotation table, wherein the groove portion is formed in the first ceiling surface, wherein when the first ceiling surface is positioned above the substrate receiving area in-between the first reaction gas supplying part and the second reaction gas supplying part, the separating gas is supplied to impede the first and second reaction gases from entering the space while gas adsorbed on the substrate can pass through the space. |
