HiPIMS layering

摘要

The present invention relates to a method for the vapor deposition of PVD layer systems by means of sputtering on at least one substrate, wherein the layer system comprises at least a first layer, characterized in that, at least in one step of the method, a HiPIMS method is used with a power density of at least 250 W/Cm2, wherein a pulse length with a duration of at least 5ms is used while a substrate bias is applied to the substrate.

主权项

1. Method for depositing PVD layer systems by vapor deposition by means of sputtering on at least one substrate, wherein the layer system comprises at least a first layer and a second layer, said first and second layers being deposited by using a HiPIMS method which enables operating at least two partial cathodes and attaining power densities of 250 W/cm2 or higher and impulse length durations of 5 ms or longer, characterized in that the method comprises the deposition of the first or the deposition of the second HiPIMS layer by applying power impulses having impulse length with a duration of at least 5 ms for attaining a power density of at least 250 W/cm2 whilst on the substrate a substrate bias is applied, and wherein, for the deposition of another of the first or second HiPIMS layer, power impulses having impulse length with shorter duration are used, so that the morphology of the HiPIMS layer deposited by using power impulses having impulse length with longer duration differs from the morphology of the HiPIMS layer deposited by using power impulses having impulse length with shorter duration, wherein the longer duration and the shorter duration are chosen in such a manner that the layer deposited by using the longer duration of the impulse length shows a coarser morphology than the layer that was deposited using shorter impulse length and in this manner the PVD layer system comprises a coarser-grained layer and a finer-grained layer, where the coarser-grained layer is the layer showing the coarser morphology.