| 摘要 |
1,200,327. Semi-conductor devices. MATSUSHITA ELECTRONICS CORP. 21 Aug., 1967 [19 Sept., 1966], No. 38473/67. Heading H1K. A semi-conductor device of the type comprising a substrate of one conductivity type having a region of opposite type at one surface thereof, an insulating layer on the surface, and an electrode layer deposited on the insulating layer and connected to the region, is characterized in that the insulating layer extends beyond the edge of the electrode layer for a distance not exceeding 300 times the thickness of the insulating layer. This reduces the capacity between the electrode layer and the substrate by limiting the extent of the inversion layer which forms beneath the insulating layer. Preferably the edge of the electrode layer lies above the edge of the region, and in an example the insulating layer has a thickness of 0À12Á and an overlap of 9Á. |
