| 摘要 |
PURPOSE:To obtain a light beam with high power and sharp directivity by a method wherein a plurality of light activated lines are arranged near to each other so as to have mutual coupling in electromagnetic wave in a solid medium consisting of compound semiconductor, and in addition length of these lines are prefered in accordance with a number of lines. CONSTITUTION:In a clad region 1 consisting of solid medium of InGaAsP system, for example five cores 21-25 of active laser medium consisting of InGaAsP system is buried. In this arrangement shapes and measures of cross section of cores 21-25 are selected so as to propagate a fundamental mode of light beam, and taking them in equal lengths in addition, they are placed near to each other with a spacing (d) so as to have a coupling in electromagnetic wave, and cut surfaces are used as end surfaces 3 and 4. In this constitution a length (l) expressed in equations is selected in accordance with the number of cores N, where the length of core (l), the coupling coefficient between adjacent lines is C, the difference between propagation constants is DELTAbeta when the number of cores is two, and when it is 2-5, DELTAbeta=beta1-betam=betan-betam, betan=betam (2<=m<=N-1, propagation constant betan). |
