| 摘要 |
PURPOSE:To reinforce the strength of a substrate, and to simplify the manufacturing process of the high dielectric resistance element by bonding a substrate having low resistivity with one main surface of the substrate, to which element structure is formed and to the other main surface glass passivation is conducted, in an ohmic shape. CONSTITUTION:In the manufacturing process of the element such as a high dielectric resistance diode, P<+> layers 3, 3' are diffused and shaped to both main surfaces of the N<-> substrate 1, and one P<+> layer 3' is removed. An N<+> diffusion layer 2 is formed at the surface side removed, and the low resistance substrate 11 is fixed onto the exposed surface of the P<+> layer 3 through a layer 10 consisting of the metal or alloy of Ag, Al, etc. Grooves for passivation are shaped, coated with glass 4 and stabilized, electrodes 15, 5' are formed and the whole is divided at every element. Accordingly, the thickness of a wafer to be treated is thinned and diffusion time can be shortened, while the substrate can be reinforced lest fracture, etc. should be generated during a passivation process, and the element can be manufactured at low cost. |
