| 摘要 |
PURPOSE:To improve the controllability of a CVD film and the homogeneity of film quality of a vapor phase chemical reaction on a semiconductor wafer substrate preheated at a lower temperature than the temperature required for the vapor phase chemical reaction. CONSTITUTION:A carrier gas 11 introduced in a vapor phase chemical reaction chamber at a normal temperature is heated by a heater 17 in a quartz injection nozzle 18 and a reaction gas 13 introduced at a normal temperature is mixed with the heated carrier gas at the tip of the quartz injection nozzle 18 and is injected. In this case, the reaction gas 13 is thermally decomposed or thermally reacted by the heat energy of the carrier gas 11. Meanwhile, a semiconductor wafer 22 preheated at a lower temperature than the temperature required for a vapor phase chemical reaction is mounted near the tip of the quartz injection nozzle 18 and the semiconductor wafer 22 is chemically reacted in a vapor phase with the injected gas. This improves the controllability of a CVD film and the homogeneity of film quality.
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