PRODUCTION OF POLYCRYSTALLINE SILICON INGOT AND APPARATUS FOR PRODUCTION THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a production process capable of producing a good-quality polycrystalline silicon ingot which is unified in the growth direction of the crystals in a specified direction and in which impurities are not dissolved and an apparatus for production therefor. SOLUTION: This process for producing the polycrystalline silicon ingot consists in housing a silicone crystalline raw material into a crucible 3 adjustable in temp. by a heater 6 and heating the silicone crystalline raw material by a heater 6 to melt the material, then activating a cooling body 10 installed above the crucible 3 to descend and bringing the base surface of the cooling body 10 into contact with the liquid surface of the silicon melt 4, then activating the cooling body 10 to ascend while crystallizing the polycrystalline silicon on the base surface 10a of the cooling body 10. The apparatus 7 for production of the polycrystalline silicon ingot includes the crucible 3 which is controllable in the temp. by heater 6 and is vertically movable and the cooling body 10 which is installed above the crucible 3 and is vertically movable. The crucible 3 and the cooling body 10 are respectively rotatable.