发明名称 METHOD OF CONTROLLING SELF-ARC-EXTINGUISHING SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain an effect equivalent to the effect obtained by utilizing a gate driving circuit in which both gates are provided with a gate controlling power supply, by providing a capacitor between one gate and the main electrode connected with a gate controlling power supply for the other gate. CONSTITUTION:When a switch 16 is opened and a switch 17 is closed, by P<+>- N<->-N<+> junction between a gate 14 and a cathode 1 is biased reversely. Under this condition, holes and electrons are swept away from a gate electrode 8 and a cathode electrode 6, respectively, as the reverse current of the gate 4. When a channel 5 is thereby depleted completely, the current is inhibited from flowing from an anode 2 to the cathode 1 and the cathode current becomes zero. As a result, the anode current flows through an N type buffer layer 10, going out from a second gate 20, flowing via a capacitor 9, and stops, applying an overvoltage to the capacitor 9. At the next moment, the reverse recovery current flows, whereby electrons and holes are swept away from a second gate electrode 20 and an anode electrode 7, respectively.
申请公布号 JPS6147667(A) 申请公布日期 1986.03.08
申请号 JP19840168424 申请日期 1984.08.11
申请人 TOYO ELECTRIC MFG CO LTD 发明人 KAWAMURA YUTAKA
分类号 H01L29/74;H01L29/739;H03K17/73;H03K17/732 主分类号 H01L29/74
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