发明名称 |
X=ray detector formed from semiconductor wafer - has silicon detector elements with separating gaps and electrodes for collecting charge formed by perpendicular incidence radiation |
摘要 |
The detector elements (12) are arranged close to each other in one web (11) at least, so that a gap (16) is formed between two adjacent detector elements. The web lies at the side away from the X-ray radiation source. The detector elements are provided with electrodes (13). Withj the gradiation of the X-ray beam, the charge formed vertical to the incidence direction of the X-ray radiation is collected. The detector elements and the web are pref. constructed from a semiconductor wafer. A charge transfer circuit is provided on the semiconductor wafer for the selective read-out of the detector elements. USE/ADVANTAGE - For medical X-ray computer tomography or luggage testing appts. Linear, simple construction. Gives high resolution and short reaction times.
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申请公布号 |
DE4025427(A1) |
申请公布日期 |
1992.02.13 |
申请号 |
DE19904025427 |
申请日期 |
1990.08.10 |
申请人 |
SIEMENS AG, 8000 MUENCHEN, DE |
发明人 |
STEIN, KARL-ULRICH, DR., 8025 UNTERHACHING, DE |
分类号 |
G01T1/20;G01T1/24;H01L31/115;H01L31/117 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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