发明名称 X=ray detector formed from semiconductor wafer - has silicon detector elements with separating gaps and electrodes for collecting charge formed by perpendicular incidence radiation
摘要 The detector elements (12) are arranged close to each other in one web (11) at least, so that a gap (16) is formed between two adjacent detector elements. The web lies at the side away from the X-ray radiation source. The detector elements are provided with electrodes (13). Withj the gradiation of the X-ray beam, the charge formed vertical to the incidence direction of the X-ray radiation is collected. The detector elements and the web are pref. constructed from a semiconductor wafer. A charge transfer circuit is provided on the semiconductor wafer for the selective read-out of the detector elements. USE/ADVANTAGE - For medical X-ray computer tomography or luggage testing appts. Linear, simple construction. Gives high resolution and short reaction times.
申请公布号 DE4025427(A1) 申请公布日期 1992.02.13
申请号 DE19904025427 申请日期 1990.08.10
申请人 SIEMENS AG, 8000 MUENCHEN, DE 发明人 STEIN, KARL-ULRICH, DR., 8025 UNTERHACHING, DE
分类号 G01T1/20;G01T1/24;H01L31/115;H01L31/117 主分类号 G01T1/20
代理机构 代理人
主权项
地址