发明名称
摘要 Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
申请公布号 JP2999957(B2) 申请公布日期 2000.01.17
申请号 JP19950331447 申请日期 1995.12.20
申请人 发明人
分类号 B32B18/00;B22F7/02;C04B35/581;C04B37/02;C04B41/51;C04B41/52;C04B41/88;C04B41/89;C22C29/16;H01L21/48;H01L23/373;H05K1/03;H05K3/24;H05K3/40;H05K3/46 主分类号 B32B18/00
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