| 摘要 |
PURPOSE: To improve the area efficiency of a wafer by forming an SOI substrate where an arbitrary structure with electrical characteristics are buried between a seed wafer and a handle wafer. CONSTITUTION: Before a seed wafer 21 and a handle wafer 36 are joined, conductive or resistive films 27, 29, and 33 are evaporated in multiple layers on the seed wafer 21 and an arbitrary structure 32 (for example, a capacitor, a resistor, and a connecting wire) with electrical characteristics are formed individually or compoundly. Then, a surface where the structure 31 is formed is adhered to the handle wafer 36, thus manufacturing an SOI substrate and hence overlapping an arbitrary structure 31 inside an active region 37 but also wiring a metal wire on the upper and lower surfaces of the SOI substrate independently and hence improving the area efficiency of the wafer.
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