发明名称 METHOD AND APPARATUS FOR BONDING SEMICONDUCTOR DEVICE
摘要 PURPOSE:To suppress deformation of a bonding stage and to reduce the difference between the height of a protruding electrode and a total height of leads by previously heating the stage to reduce the temperature difference between a bonding tool and the stage before press bonding. CONSTITUTION:Before press bonding by a bonding tool 5, a bonding stage 40 is previously heated to 285 deg.C. The stage 40 is accurately fixed to a bonding unit base through fittings similarly to a conventional apparatus. As a result, immediately after bonding is completed, the temperature of the top surface of the stage 40 becomes 360.4 deg.C. In this case, the temperature of the lower surface of the stage 40 is held at 285 deg.C. The bonding time is 3sec, and the material of the stage 40 is SKS-3 (alloy tool steel).
申请公布号 JPH0750320(A) 申请公布日期 1995.02.21
申请号 JP19930143229 申请日期 1993.06.15
申请人 SHINKAWA LTD;MITSUBISHI ELECTRIC CORP 发明人 SATO KIMIHARU;HASHIMOTO TOMOAKI;YASUNAGA MASATOSHI
分类号 H01L21/603;H01L21/60;(IPC1-7):H01L21/603 主分类号 H01L21/603
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