METHOD FOR MANUFACTURING SILICON CARBIDE WAFER AND METHOD FOR MANUFACTURING SILICON CARBIDE LIGHT EMITTING DIODE ELEMENT

摘要

PURPOSE:To enable much acceptor impurity to be doped and to increase carrier concentration by achieving epitaxial growth of P-type 6H-type SiC single-crystal layer on a surface with a specific range of inclination in the direction of <10-10> from (0001) face of 6H-type SIC single-crystal substrate. CONSTITUTION:SiC light emitting diode element causes the (0001) face of n-type 6H-type single-crystalline substrate 1 to be polished to form an oblique surface which is inclined at 1-10 degrees in <10-10> direction. Then, n-type 6H-type SiC single-crystal layer 2 containing nitrogen as a donor impurity and a small amount of Al to the extent that a conduction type is not inverted is subjected to epitaxial growth on an inclination surface 1a. Further. P-type 6Htype SiC single-crystal layer 3 with a high concentration containing Al as an acceptor impurity is subjected to epitaxial growth. Then, n-type side ohmic electrode 4 and p-type side ohmic electrode 5 are formed on the other main surface 1b and the p-type SiC single-crystal layer 3 of the substrate 1.