发明名称 |
Method for manufacturing a superconducting device having an extremely thin superconducting channel |
摘要 |
The invention relates to a method of manufacturing a superconducting device, which comprises the steps of forming on a principal surface of a substrate a non-superconducting oxide layer having a similar crystal structure to that of a c-axis oriented oxide superconductor thin film and a flat-top projection at its center portion, forming a c-axis oriented oxide superconductor thin film having an extremely thin thickness on the non-superconducting oxide layer so as to form a superconducting channel on the projecting portion of the non-superconducting oxide layer, forming an insulating layer on the c-axis oriented oxide superconductor thin film so as to form a gate insulating layer on the superconducting channel, and forming an a-axis oriented oxide superconductor thin film so as to form a superconducting source region and a superconducting drain region of which upper surfaces have the same level as that of the superconducting channel. The projecting portion of the non-superconducting oxide layer is preferably formed by a lift-off process using a lift-off layer formed of a CaO layer covered with a Zr layer which is removed by utilizing water and the following reaction: CaO+H2O->Ca(OH)2.
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申请公布号 |
US5510324(A) |
申请公布日期 |
1996.04.23 |
申请号 |
US19940353396 |
申请日期 |
1994.12.02 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAKAMURA, TAKAO;IIYAMA, MICHITOMO;INADA, HIROSHI |
分类号 |
H01L39/14;(IPC1-7):H01L39/24;H01L39/22 |
主分类号 |
H01L39/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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