Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material

摘要

A power semiconductor device having a source region (24) and a drain region (26) disposed in a semiconductor substrate (10). A composite drift region is formed of an n-type first drift region (12) in the substrate (10) and of a second drift region (36) composed of a second type of semiconductor material such as gallium arsenide or silican carbide which is a different material than that of the substrate.