| 摘要 |
PROBLEM TO BE SOLVED: To improve the efficiency of a compound semiconductor light emitting device by stacking an SiC growth layer for absorbing lattice defects on an SiC substrate just above the SiC substrate, and a GaAlInN layer thereon. SOLUTION: An SiC growth layer for absorbing lattice defects on an SiC substrate is stacked just above the SiC substrate, and a Gax Aly In1-x-y N (0<=X<=1, 0<=Y<=1) layer is stacked thereon. More specifically, an n type SiC growth layer 2 is grown on a 6H-SiC substrate 1, on which an AlN layer 3 is grown. Then, an n type GaN layer 4 is grown thereon, on which an n type GaAlN lower cladding layer 5 is grown. Then, a GaInN active layer 6 is grown thereon, and then a GaAlN upper cladding layer 7 including Mg doped therein is grown, and a GaN contact layer 8 including Mg therein is grown, and further the foregoing upper cladding layer 7 and the contact layer 8 are brought into low resistance and a p type, respectively. |
