| 摘要 |
<p>PROBLEM TO BE SOLVED: To maintain simplicity provided by a RHEDD method (reflected high speed electron beam reffraction method), and make it possible to stracturally analyze an amorphous material film such as a silicone oxide film. SOLUTION: For a specimen 101 the surface of a single crystal substrate of which is formed with an amorphous material. film, the primary electron beam 102 is irradiated to the side of the amorphous material film with an incident angle kept at about 2 deg., and an analytical figure from the surface of the specimen is thereby stored in an imaging plate 103. The original position of the figure is determined by making use of the symmetry of the refraction peak of the single crystal substrate. If a distance to one reffraction point in a silicone single crystal substrate is made A, a camera constant B is obtained based on a formula, B=A×d1 (d1 represents a surface interval for a real space of its refraction point), a distance C from an original point X to a peak position is then determined based on the strength distribution of a haloring pattern from the amorphous material film, and the periodic interval d2 of a short range order for the amorphous material film is thereby computed as a fomula, d2 =B/C.</p> |
