| 摘要 |
PROBLEM TO BE SOLVED: To form a wiring of a desired line width with an excellent controllability suppressing the skirting of a resist exposed and developed. SOLUTION: An SiO2 film 14 of a film thickness 250-310 is formed on a polycide film 13, and a resist 15 is applied on to the SiO2 film 14 is exposed to i line (wavelength 365nm) by a wiring pattern, and is developed to form the wiring pattern in the resist 15. And using this resist as a mask, the SiO2 film 14 and the polycide layer 13 are simultaneously processed. As a result of this, it becomes possible to suppress skirting of the resist 15, ensuring an insulation withstand voltage between the polycide layer 13 and a conductive layer being an upper layer to the SiO2 film 14, and suppressing the increase of the differences in level of stepped parts. |
