| 摘要 |
PROBLEM TO BE SOLVED: To form a plurality of quantum boxes having a different magnitude on the same substrate by a method, wherein a fine crystal having an unequal magnitude in a direction within a face on a face of a semiconductor substrate is disposed in a scattered point form. SOLUTION: A fine crystal body 5 having a large In composition is formed in a region having a small In composition, so as to be distributed on a scattered point. Since an enegy level obtained by electrons and holes in this fine crystal body 5 having many In compositions is lower than that of a peripheral region having a small In composition, upper and lower GaAs cap layers 4 and a GaAs buffer layer 2, the fine crystal body 5 works as a three-dimensional potential well for carriers. As described above, a quantum box 5 for confining a quantum in a three-dimensional direction for electrons and holes is formed. Strain energy in a quantum box layer 3 is changed by a magnitude of lattice mismatching with a underlayer face, and a magnitude of the lattice mismatching is changed, whereby a magnitude of the quantum box 5 can be changed. Accordingly, the plurality of quantum boxes having a different magnitude can be formed. |
