SEMICONDUCTOR DEVICE FOR HIGH-FREQUENCY POWER

摘要

PROBLEM TO BE SOLVED: To reduce the size of a resin package and, at the same time, to improve both the reliability and yield of the package. SOLUTION: A semiconductor chip for high-frequency power is die-bonded on a metallic substrate 10 and the chip is molded in a parallelepiped resin package 12 together with the substrate 10 and outer leads 11. The substrate 10 is exposed on the backside of the package 12. The substrate 10 is not protruded from the front and rear faces of the package 12, but the front and rear end faces of the substrate 10 are exposed on the front and rear side faces of the package 12 in a state where the end faces of the substrate 10 are flushed with both side faces of the package 12. Parallelepiped notches 12a are respectively formed at the center of the front and rear end sections of the package 12 and the central parts of the front and rear end sections of the substrate 10 on the surface of the substrate 10 are exposed in the notches 12a as soldering sections 10a.