| 摘要 |
PROBLEM TO BE SOLVED: To suppress the overetching in forming a contact hole on a cell plate by forming an insulating film on the cell plate. SOLUTION: After formation of an element isolating oxide film 4 on a silicon substrate 1, a gate oxide film 5, gate electrodes 6 and 6c, source/drain regions 7a-7c, and an interlayer insulating film 8 are formed. Then, polyside wirings 10 and 10c, and an interlayer insulating film 11 are made, and then a contact hole 12 is made. Next, storage nodes 131-134 are made in the contact hole 12, and then a nitride film 14 is stacked, and a cell plate 15 is made. After that, BPSG (oxide film about 5,000Åincluding boron or phosphor all over the surface) is stacked all over the surface, and it is heat-treated in nitrogen atmosphere, whereby the recess Q between the fellow storages 131 is stopped.
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