发明名称 PLATED CHROME SOLDER DAM FOR HIGH POWER MMICS
摘要 A microwave device includes a circuit element and a chromium layer disposed over the circuit element. The circuit element may have an electrolytically plated gold surface. The microwave device further includes a bump disposed over the circuit element. The bump may include silver, while the chromium layer may include a portion extending from the bump to form a solder dam. A native oxide forms on the portion of the chromium layer to inhibit solder contamination and/or silver migration. The native oxide may also act as an adhesion agent for a subsequently deposited dielectric passivation layer.
申请公布号 US2002000657(A1) 申请公布日期 2002.01.03
申请号 US19990306075 申请日期 1999.05.06
申请人 WEN CHENG P.;LARSON RAWLEY D. 发明人 WEN CHENG P.;LARSON RAWLEY D.
分类号 H01L23/485;H01L23/66;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/485
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