发明名称 |
PLATED CHROME SOLDER DAM FOR HIGH POWER MMICS |
摘要 |
A microwave device includes a circuit element and a chromium layer disposed over the circuit element. The circuit element may have an electrolytically plated gold surface. The microwave device further includes a bump disposed over the circuit element. The bump may include silver, while the chromium layer may include a portion extending from the bump to form a solder dam. A native oxide forms on the portion of the chromium layer to inhibit solder contamination and/or silver migration. The native oxide may also act as an adhesion agent for a subsequently deposited dielectric passivation layer.
|
申请公布号 |
US2002000657(A1) |
申请公布日期 |
2002.01.03 |
申请号 |
US19990306075 |
申请日期 |
1999.05.06 |
申请人 |
WEN CHENG P.;LARSON RAWLEY D. |
发明人 |
WEN CHENG P.;LARSON RAWLEY D. |
分类号 |
H01L23/485;H01L23/66;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/485 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|