发明名称
摘要 <p>PURPOSE:To contrive to reduce cost by performing a stable chemical W-reaction and grinding process, the process time, the number of step, and reduce cost by simplifying control in a method of manufacturing a semiconductor device when a semiconductor substrate is flatted in the semiconductor device. CONSTITUTION:A plate 33 providing an abrasive cloth 34 is arranged within a treatment tank 32 and a ring 35 for once holding solvents 38a, 38b is provided surrounding the plate 33. Further, a rotation head 36 chucking a semiconductor substrate 37 is supplying with a solvent 38a, a second nozzle 40 for supplying with a solvent 38b that is adjusted in temperature, and a temperature sensor 45 for detecting an increase in temperature by a chemical reaction are provided.</p>
申请公布号 JP3272835(B2) 申请公布日期 2002.04.08
申请号 JP19930275802 申请日期 1993.11.04
申请人 发明人
分类号 H01L21/683;H01L21/304;H01L21/68;(IPC1-7):H01L21/304 主分类号 H01L21/683
代理机构 代理人
主权项
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