发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To realize high speed transmission of a signal between a semiconductor device and outside equipment while miniaturizing the semiconductor device. SOLUTION: An element electrode 11 for a high speed signal and an element electrode 12 for a normal signal connected electrically to the semiconductor device are formed on a semiconductor board 10 providing the semiconductor device, and a low elastic modulus layer 14 is formed to cover each element electrode. A land 22 for the high speed signal connected to the element electrode 11 for the high speed signal 11 through a first opening part 14a is formed just above the element electrode 11 for the high speed signal. A land 23 for the normal signal 23 and connected wiring 24 whose one end is connected to the element electrode 12 for the normal signal through a second opening part 14b and whose other end is connected to the land 23 for the normal signal are formed. |
申请公布号 |
JP2002164468(A) |
申请公布日期 |
2002.06.07 |
申请号 |
JP20000362625 |
申请日期 |
2000.11.29 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
SAWARA RYUICHI;WATASE KAZUMI;KUMAKAWA TAKAHIRO;KAINO NORIYUKI;SHIMOISHIZAKA NOZOMI |
分类号 |
H01L23/52;H01L21/3205;H01L23/12;H01L23/31;H01L23/485;H01L23/522 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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