发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To realize high speed transmission of a signal between a semiconductor device and outside equipment while miniaturizing the semiconductor device. SOLUTION: An element electrode 11 for a high speed signal and an element electrode 12 for a normal signal connected electrically to the semiconductor device are formed on a semiconductor board 10 providing the semiconductor device, and a low elastic modulus layer 14 is formed to cover each element electrode. A land 22 for the high speed signal connected to the element electrode 11 for the high speed signal 11 through a first opening part 14a is formed just above the element electrode 11 for the high speed signal. A land 23 for the normal signal 23 and connected wiring 24 whose one end is connected to the element electrode 12 for the normal signal through a second opening part 14b and whose other end is connected to the land 23 for the normal signal are formed.
申请公布号 JP2002164468(A) 申请公布日期 2002.06.07
申请号 JP20000362625 申请日期 2000.11.29
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SAWARA RYUICHI;WATASE KAZUMI;KUMAKAWA TAKAHIRO;KAINO NORIYUKI;SHIMOISHIZAKA NOZOMI
分类号 H01L23/52;H01L21/3205;H01L23/12;H01L23/31;H01L23/485;H01L23/522 主分类号 H01L23/52
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