| 摘要 |
PROBLEM TO BE SOLVED: To objectively calculate variation in electrical characteristics caused by variation in manufacturing processes. SOLUTION: This semiconductor simulation method, which simulates variation in electrical characteristics of a semiconductor device includes a process (step S101) in which the variation in manufacturing processes is mapped, corresponding to respective different manufacturing processes as variation in electrical characteristics, a process (step S102) in which a distribution obtained by the mapping is divided into small regions and occurrence probabilities in the respective regions are calculated for the respective manufacturing processes, and a process (step S103) in which the occurrence probabilities of the respective probabilities are superposed for the respective manufacturing processes.
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