发明名称 |
Thin film transistor with metal oxide layer and method of making same |
摘要 |
A thin film transistor includes an insulating substrate, an active layer located over the substrate, a gate electrode located over the substrate; and a charge storage region located between the active layer and the gate electrode. The charge storage region includes a tunneling dielectric located adjacent to the active layer, a blocking dielectric located adjacent to the gate electrode and a charge storage dielectric located between the tunneling dielectric and the blocking dielectric. At least one of the tunneling dielectric, the charge storage dielectric and the blocking dielectric comprises a layer having a dielectric constant greater than 3.9, such as a metal oxide layer.
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申请公布号 |
US6858899(B2) |
申请公布日期 |
2005.02.22 |
申请号 |
US20020270127 |
申请日期 |
2002.10.15 |
申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
MAHAJANI MAITREYEE;WALKER ANDREW J. |
分类号 |
H01L21/84;H01L27/06;H01L27/115;H01L27/12;H01L29/51;H01L29/792;(IPC1-7):H01L27/01 |
主分类号 |
H01L21/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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