| 摘要 |
A ferroelectric memory reads data from a memory cell by using a sense amplifier to compare a reference potential with a potential produced on a bit line by the memory cell. The reference potential may generated by a pre-charge circuit connected to the sense amplifier. Alternatively, the reference potential may be generated by the memory cell itself. In either case, the reference potential is obtained without the need for a reference cell, and without the need to drive a bit line to the reference potential. Current consumption is accordingly reduced, and integration density can be increased.
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