发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 A substrate processing apparatus stably and efficiently conducts a film forming process on a substrate to be processed. In the substrate processing apparatus, the substrate to be processed is supported at a position facing a heater portion, and a holding member for holding the substrate is rotated, whereby the temperature distribution of the substrate is kept uniform and a warp of the substrate is suppressed. The inner wall of the processing vessel is covered with a quartz liner which is made of opaque quartz, and thus protected from ultraviolet rays emitted from an ultraviolet light source. The temperature rise of the inner wall caused by heat from the heater portion is suppressed due to the heat insulating effect of the quartz liner. Consequently, the life cycle of the processing vessel can be prolonged. <IMAGE>
申请公布号 EP1544904(A1) 申请公布日期 2005.06.22
申请号 EP20030798443 申请日期 2003.09.22
申请人 TOKYO ELECTRON LIMITED 发明人 HORIGUCHI, TAKAHIRO;KUWAJIMA, RYO
分类号 H01L21/31;C23C16/46;C23C16/48;H01L21/00;H01L21/02;(IPC1-7):H01L21/31 主分类号 H01L21/31
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