| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for applying a nitride film spacer SAC structure to a polycide structure, making a memory cell of a DRAM fine and obtaining high integration. SOLUTION: The semiconductor device is formed with a plurality of first conductive layers formed on a substrate in parallel, a first insulating film formed on the first conductive layers, a second insulating film formed of a silicon nitride film formed on the first insulating film, a first contact window formed through the first and second insulating films and formed between the first conductive layers, a second conductive layer formed in the contact window, a third insulating film which is formed on the second insulating film and whose etching characteristic differs from that of the silicon nitride film, a second contact window which is formed in the third insulating film and positioned on the second conductive layer, and a third conductive layer connected with the second conductive layer through the second contact window. COPYRIGHT: (C)2005,JPO&NCIPI
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