| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which is capable of providing a high-power laser by a simple structure even if a light confinement coefficient in an activated layer is lowered, and in which a mode is less prone to change. SOLUTION: The semiconductor laser comprises an activated layer 14 including multiple quantum wells; an n-type clad layer 32 and a p-type clad layer 18 which sandwich the activated layer 14; and a p-type electrode 20 and an n-type electrode 21 for injecting power into the activated layer 14, which are all formed on a semiconductor substrate 11 constituted of InP. The light emitting end surface thereof comprises an end surface 22b which is applied with a high reflectance film; and an end surface 22a which is applied with a low reflectance film, wherein the n-type clad layer 32 comprises InGaAsP, and at least part of the width of the activated layer 14 is reversely tapered from the end surface 22b applied with the high reflectance film to the end surface 22a applied with the low reflectance film. COPYRIGHT: (C)2005,JPO&NCIPI
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