| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for planarizing the insulation film of a semiconductor apparatus in which loss is reduced at the part other than the insulation film of the semiconductor apparatus by controlling the temperature of processing atmosphere and the atmospheric concentration in the insulation film thereby enhancing fluidity of the insulation film and lowering the planarization processing temperature. SOLUTION: Interior of a processing container 2 introduced with steam is heated at 350°C while being applied with a pressure of 2 MPa. A step for placing a semiconductor apparatus 8 in the processing container 2 for a predetermined time and diffusing steam into the insulation film of the semiconductor device is carried out. Subsequently, the insulation film having that diffused state undergoes a reaction/fluidization step in the processing container 2. In the reaction/fluidization step, the pressure is sustained at 2 MPa and the ambient temperature of the semiconductor device is set at 750°C. Consequently, the insulation film is fluidized. When fluidity of the insulation film lowers, diffusion step is carried out again while lowering the pressure. Sufficient planarity is attained by repeating the diffusion step and the reaction/fluidization step alternately. COPYRIGHT: (C)2005,JPO&NCIPI
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