METHOD FOR DEPOSITING CRYSTALLINE SEMICONDUCTOR FILM, CRYSTALLINE SEMICONDUCTOR FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM DIODE, CRYSTALLINE THIN FILM DIODE, METHOD FOR MANUFACTURING CRYSTALLINE THIN FILM TRANSISTOR, CRYSTALLINE THIN FILM TRANSISTOR AND DISPLAY

摘要

PROBLEM TO BE SOLVED: To manufacture a crystalline thin film semiconductor device having good characteristics by improving the p-n junction, p-i-n junction or crystallinity of a semiconductor film in a channel forming region and minimizing an impurity concentration having an adverse effect on the characteristics. SOLUTION: One acicular crystal is grown in a thin line 1 by adding a catalytic substance, and a crystalline thin film diode having a p-n junction or a p-i-n junction is manufactured in the thin line part 1, or a crystalline thin film transistor having the thin line part 1 as a channel is manufactured. Furthermore, the catalytic substance is gettered to the outside of the thin line 1. Since no grain boundary exists in these p-n junction and p-i-n junction or in the channel region, the concentration of the catalytic substance is lowered and a diode or a transistor having characteristics close to those attained by using a single crystal can be manufactured. A liquid crystal display 60 having a high numerical aperture or a display 60 incorporating a peripheral circuit can be manufactured using these crystalline thin film semiconductor devices. COPYRIGHT: (C)2005,JPO&NCIPI